2SK4171 no. a0787-1/5 features low on-resistance. load switching applications. motor drive applications. avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 100 a drain current (pulse) i dp pw 10 s, duty cycle 1% 400 a allowable power dissipation p d 1.75 w tc=25 c75w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 370 mj avalanche current *2 i av 65 a note : * 1 v dd =30v, l=100 h * 2 l 100 h, single pulse marking : k4171 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0787 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. d0507qa ti im tc-00001044 sanyo semiconductors data sheet 2SK4171 n-channel silicon mosfet general-purpose switching device applications
2SK4171 no. a0787-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance yfs v ds =10v, i d =50a 35 60 s static drain-to-source on-state resistance r ds (on)1 i d =50a, v gs =10v 5.5 7.2 m 1 r ds (on)2 i d =50a, v gs =4v 7.5 10.5 m 1 input capacitance ciss v ds =20v, f=1mhz 6900 pf output capacitance coss v ds =20v, f=1mhz 740 pf reverse transfer capacitance crss v ds =20v, f=1mhz 540 pf turn-on delay time t d (on) see specified test circuit. 48 ns rise time t r see specified test circuit. 380 ns turn-off delay time t d (off) see specified test circuit. 500 ns fall time t f see specified test circuit. 370 ns total gate charge qg v ds =30v, v gs =10v, i d =100a 135 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =100a 18 nc gate-to-drain miller charge qgd v ds =30v, v gs =10v, i d =100a 50 nc diode forward voltage v sd i s =100a, v gs =0v 1.0 1.2 v package dimensions unit : mm (typ) 7507-002 switching time test circuit avalanche resistance test circuit 10.2 5.1 4.5 1.3 15.1 14.0 2.7 6.3 3.6 18.0 (5.6) 2.7 1.2 0.8 0.4 2.55 2.55 123 1 : gate 2 : drain 3 : source sanyo : to-220 pw=10 s d.c. ) 1% p. g 50 1 g s d i d =50a r l =0.6 1 v dd =30v v out 2SK4171 v in 10v 0v v in 50 1 10v 0v * 50 1 v dd l 2SK4171
2SK4171 no. a0787-3/5 r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs ciss, coss, crss -- v ds i s -- v sd y fs -- i d sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c forward transfer admittance, y fs -- s static drain-to-source on-state resistance, r ds (on) -- m 1 static drain-to-source on-state resistance, r ds (on) -- m 1 drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a it12420 it12417 --50 --25 150 030 10 15 20 25 5 1k 3 3 5 2 it12424 it12422 it12421 0.1 1.0 23 57 3 1.0 10 7 0.00e+00 2.00e-01 4.00e-01 6.00e-01 8.00e-01 1.00e+00 1.20e+00 1.40e+00 0.01 0.1 5 7 3 2 2 1.0 5 7 3 2 10 5 7 3 2 100 5 7 3 2 3 7 5 2 2 3 2 100 7 5 10k 2 2 10 357 2 100 32 57 0 25 50 75 100 125 3 5 7 7 --25 c 75 c 25 c tc= 75 c tc= --25 c i d = 50 a single pulse single pulse tc= 75 c 25 c -- 25 c tc= --25 c 25 c 75 c v ds =10v single pulse tc= 75 c 25 c -- 25 c v gs =0v single pulse ciss crss it12423 0.1 7 1.0 23 5 2 7 10 35 2 100 1000 2 3 2 3 5 2 5 7 7 t d (off) v dd =30v v gs =10v f=1mhz t r 0.2 0.6 0.4 0.8 1.0 1.2 1.4 2.0 1.6 1.8 0 0 20 40 200 120 100 80 160 140 180 60 it12419 3 24567 10 89 0 2 10 8 6 20 18 16 12 14 4 0 2 4 16 10 8 6 12 14 it12418 0.5 1.0 2.5 1.5 2.0 5.0 4.5 4.0 3.0 3.5 0 0 20 60 40 200 140 120 100 160 180 80 tc= 25 c single pulse v gs =3v 10v 4v 6v v ds =10v single pulse t f 25 c v gs =4v , i d = 50 a v gs =10v , i d = 50 a 8v coss 7 100 35 t d (on)
2SK4171 no. a0787-4/5 a s o v gs -- qg p d -- ta total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, tc -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it12429 ambient temperature, ta -- c p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w it12426 0.1 1.0 2 3 5 7 2 10 3 5 7 2 0.1 i dp =400a i d =100a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). it12425 0 50 150 100 0 2 4 6 1 3 5 8 7 9 10 v ds =30v i d =100a pw ) 10 s 1.0 23 57 2 10 357 2 0 0 20 40 60 80 100 120 2.0 140 160 1.75 1.5 1.0 0.5 it12427 100 357 10 s 0 0 20 40 60 80 100 120 140 160 40 60 50 70 80 75 90 30 20 10 it12428 100 3 5 7 2 1000 3 5 7 tc=25 c single pulse
2SK4171 no. a0787-5/5 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. note on usage : since the 2SK4171 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of december, 2007. specifications and information herein are subject to change without notice.
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